PRODUCT DETAIL

10N09

屏蔽栅沟槽 SGT MOSFET

10N09 10N09 10N09
Salltech萨瑞微
量产

10N09

Vds: SNV ID: 4A

主要封装 / 规格SG13N10TL
VdsSNV
Rds Vgs=10V Typ±20mΩ
Rds Vgs=10V Max1.3mΩ
ID4A
Type null
Vds SNV
Vgs 100
Rds Vgs=10V Typ ±20mΩ
Rds Vgs=10V Max 1.3mΩ
VGS(th) Min 1.6V
VGS Max 2V
ID 4A
PD 325W
Dynamic Ciss 313pF
Dynamic Coss 12625pF
Dynamic Crss 2099pF
Dynamic Rg 269Ω
EAS 2.4mJ
IAS 1823A
Marking 13N10
Package SG13N10TL