PRODUCT DETAIL
10N09
屏蔽栅沟槽 SGT MOSFET
Type
null
Vds
SNV
Vgs
100
Rds Vgs=10V Typ
±20mΩ
Rds Vgs=10V Max
1.3mΩ
VGS(th) Min
1.6V
VGS Max
2V
ID
4A
PD
325W
Dynamic Ciss
313pF
Dynamic Coss
12625pF
Dynamic Crss
2099pF
Dynamic Rg
269Ω
EAS
2.4mJ
IAS
1823A
Marking
13N10
Package
SG13N10TL