PRODUCT DETAIL

10N10C

屏蔽栅沟槽 SGT MOSFET

10N10C 10N10C

10N10C

Salltech萨瑞微

量产

10N10C

Vds: SNV ID: 3.9A

主要封装 / 规格SG10N09TL

VdsSNV

Rds Vgs=10V Typ±20mΩ

Rds Vgs=10V Max1.08mΩ

ID3.9A

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Type null

Vds SNV

Vgs 90

Rds Vgs=10V Typ ±20mΩ

Rds Vgs=10V Max 1.08mΩ

VGS(th) Min 1.3V

VGS Max 2.3V

ID 3.9A

PD 305W

Dynamic Ciss 260pF

Dynamic Coss 10572pF

Dynamic Crss 3117pF

Dynamic Rg 54Ω

EAS 2.3mJ

IAS 1280A

Package SG10N09TL