PRODUCT DETAIL

110

屏蔽栅沟槽 SGT MOSFET

110 110 110
Salltech萨瑞微
量产

110

Vds: TO-252V ID: 3.3A

主要封装 / 规格47
VdsTO-252V
Rds Vgs=10V TypSNmΩ
Rds Vgs=10V Max60mΩ
ID3.3A
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Type SG26N06T4
Vds TO-252V
Rds Vgs=10V Typ SNmΩ
Rds Vgs=10V Max 60mΩ
VGS(th) Min ±20V
VGS Max 2.4V
ID 3.3A
PD 1.2W
Dynamic Ciss 2.5pF
Dynamic Coss 145pF
Dynamic Crss 125pF
Dynamic Rg 2764Ω
EAS 1039mJ
IAS 39A
Marking 1.6
Package 47