PRODUCT DETAIL

11N10C

屏蔽栅沟槽 SGT MOSFET

11N10C 11N10C

11N10C

Salltech萨瑞微

量产

11N10C

Vds: SNV ID: 4A

主要封装 / 规格SG10N10TL-C

VdsSNV

Rds Vgs=10V Typ±20mΩ

Rds Vgs=10V Max0.94mΩ

ID4A

查询现货询价

Type null

Vds SNV

Vgs 100

Rds Vgs=10V Typ ±20mΩ

Rds Vgs=10V Max 0.94mΩ

VGS(th) Min 1.1V

VGS Max 2V

ID 4A

PD 400W

Dynamic Ciss 623pF

Dynamic Coss 14182pF

Dynamic Crss 3392pF

Dynamic Rg 121Ω

EAS 0.9(TYPE)mJ

IAS 1591A

Marking 63

Package SG10N10TL-C