PRODUCT DETAIL

13

屏蔽栅沟槽 SGT MOSFET

13 13 13
Salltech萨瑞微
量产

13

Vds: 54N06V ID: ±20A

主要封装 / 规格0.9
Vds54N06V
Rds Vgs=10V TypTO-220mΩ
ID±20A
Package0.9
Type 25
Vds 54N06V
Vgs SG27NE8T5
Rds Vgs=10V Typ TO-220mΩ
VGS(th) Min SNV
VGS Max 85V
ID ±20A
PD 2.8W
Dynamic Ciss 3.6pF
Dynamic Coss 2.2pF
Dynamic Crss 3.8pF
Dynamic Rg 210Ω
EAS 227mJ
IAS 8272A
Marking 1233
Package 0.9