PRODUCT DETAIL

1.8

屏蔽栅沟槽 SGT MOSFET

1.8 1.8 1.8
Salltech萨瑞微
量产

1.8

Vds: SG20N12TLV ID: 2A

主要封装 / 规格425
VdsSG20N12TLV
Rds Vgs=10V MaxSNmΩ
ID2A
Package425
Type 36N12
Vds SG20N12TLV
Vgs TOLL
Rds Vgs=10V Max SNmΩ
VGS(th) Min 120V
VGS Max ±20V
ID 2A
PD 2.6W
Dynamic Ciss 2pF
Dynamic Coss 4pF
Dynamic Crss 288pF
Dynamic Rg 416Ω
EAS 10400mJ
IAS 1200A
Marking 64
Package 425