PRODUCT DETAIL
190
屏蔽栅沟槽 SGT MOSFET
Type
40
Vds
27NE8T5V
Vgs
SG27NE8T6
Rds Vgs=10V Typ
TO-263mΩ
VGS(th) Min
SNV
VGS Max
85V
ID
±20A
PD
2.75W
Dynamic Ciss
3.6pF
Dynamic Coss
2.2pF
Dynamic Crss
3.8pF
Dynamic Rg
216Ω
EAS
227mJ
IAS
8272A
Marking
1233
Package
1.5