PRODUCT DETAIL

209

屏蔽栅沟槽 SGT MOSFET

209 209 209
Salltech萨瑞微
量产

209

Vds: 46N10V ID: ±20A

主要封装 / 规格1.13
Vds46N10V
Rds Vgs=10V TypTO-263mΩ
ID±20A
Package1.13
Type 42
Vds 46N10V
Vgs SG22N10T6
Rds Vgs=10V Typ TO-263mΩ
VGS(th) Min SNV
VGS Max 100V
ID ±20A
PD 2.2W
Dynamic Ciss 2.8pF
Dynamic Coss 2pF
Dynamic Crss 4pF
Dynamic Rg 210Ω
EAS 272mJ
IAS 13183A
Marking 3674
Package 1.13