PRODUCT DETAIL

2.3

屏蔽栅沟槽 SGT MOSFET

2.3 2.3 2.3
Salltech萨瑞微
量产

2.3

Vds: SG38NE8TLV ID: 4.2A

主要封装 / 规格1183
VdsSG38NE8TLV
Rds Vgs=10V MaxSNmΩ
ID4.2A
Package1183
Type 20N12
Vds SG38NE8TLV
Vgs TOLL
Rds Vgs=10V Max SNmΩ
VGS(th) Min 85V
VGS Max ±20V
ID 4.2A
PD 4.8W
Dynamic Ciss 2pF
Dynamic Coss 4pF
Dynamic Crss 135pF
Dynamic Rg 178Ω
EAS 4102mJ
IAS 592A
Marking 19.8
Package 1183