PRODUCT DETAIL

43

屏蔽栅沟槽 SGT MOSFET

43 43

43

Salltech萨瑞微

量产

43

Vds: 27NE8T6V ID: ±20A

主要封装 / 规格1.8

Vds27NE8T6V

Rds Vgs=10V TypTO-263-6LmΩ

ID±20A

Package1.8

查询现货询价

Type 52

Vds 27NE8T6V

Vgs SG20N10T66

Rds Vgs=10V Typ TO-263-6LmΩ

VGS(th) Min SNV

VGS Max 100V

ID ±20A

PD 2W

Dynamic Ciss 2.8pF

Dynamic Coss 2pF

Dynamic Crss 4pF

Dynamic Rg 280Ω

EAS 321mJ

IAS 8413A

Marking 1169

Package 1.8