PRODUCT DETAIL
SC100N065TA
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
10mΩ
ID@25°C
132A
Qgd
53nC
Coss
475pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
10mΩ
ID@25℃
132A