PRODUCT DETAIL
SC130N120TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
13mΩ
ID@25°C
165A
Qgd
47.3nC
Coss
283pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
13mΩ
ID@25℃
165A