PRODUCT DETAIL
SC180N120TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
18mΩ
ID@25°C
118A
Qgd
40nC
Coss
168pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
18mΩ
ID@25℃
118A