PRODUCT DETAIL
SC1K2N065TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
120mΩ
ID@25°C
26A
Qgd
8.7nC
Coss
85.6pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
120mΩ
ID@25℃
26A