PRODUCT DETAIL

SC1K6N120TA-4

碳化硅MOS (SiC MOSFET)

SC1K6N120TA-4 SC1K6N120TA-4

SC1K6N120TA-4

Salltech萨瑞微

量产

SC1K6N120TA-4

V(BR)DSS: 1200V ID: 16A

主要封装 / 规格TO-247-4

V(BR)DSS1200V

Rds(on)@25°C160mΩ

ID@25°C16A

PackageTO-247-4

查询现货询价

V(BR)DSS 1200V

Rds(on)@25°C 160mΩ

ID@25°C 16A

Qgd 6.7nC

Coss 39pF

Max Junction Temperature 175℃

Package TO-247-4

Rds(on)@25℃ 160mΩ

ID@25℃ 16A