PRODUCT DETAIL
SC1K6N120TA
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
160mΩ
ID@25°C
16A
Qgd
6.7nC
Coss
39pF
Max Junction Temperature
175℃
Package
TO-247-3
Rds(on)@25℃
160mΩ
ID@25℃
16A