PRODUCT DETAIL
SC1KN170T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1700V
Rds(on)@25°C
1000mΩ
ID@25°C
6A
Qgd
2.5nC
Coss
26.1pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
1000mΩ
ID@25℃
6A