PRODUCT DETAIL
SC200N065TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
20mΩ
ID@25°C
115A
Qgd
50nC
Coss
313pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
20mΩ
ID@25℃
115A