PRODUCT DETAIL
SC200N120TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
20mΩ
ID@25°C
109A
Qgd
32.5nC
Coss
249pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
20mΩ
ID@25℃
109A