PRODUCT DETAIL
SC330N120T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
33mΩ
ID@25°C
73A
Qgd
18.6nC
Coss
170pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
33mΩ
ID@25℃
73A