PRODUCT DETAIL
SC350N065TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
35mΩ
ID@25°C
67A
Qgd
35.8nC
Coss
250pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
35mΩ
ID@25℃
67A