PRODUCT DETAIL
SC3KN170T5
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1700V
Rds(on)@25°C
3000mΩ
ID@25°C
4A
Qgd
1.55nC
Coss
12pF
Max Junction Temperature
175℃
Package
TO-220-3
Rds(on)@25℃
3000mΩ
ID@25℃
4A