PRODUCT DETAIL
SC400N120T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
40mΩ
ID@25°C
56A
Qgd
45.1nC
Coss
126pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
40mΩ
ID@25℃
56A