PRODUCT DETAIL
SC40N120T6-7D
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25℃
40mΩ
ID@25℃
50A
Qgd
19nC
Coss
148pF
Max Junction Temperature
175℃
Package
TO-263-7L-DBC