PRODUCT DETAIL
SC450N065T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
45mΩ
ID@25°C
51A
Qgd
15.3nC
Coss
139pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
45mΩ
ID@25℃
51A