PRODUCT DETAIL
SC580N065TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
58mΩ
ID@25°C
43A
Qgd
22nC
Coss
120pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
58mΩ
ID@25℃
43A