PRODUCT DETAIL
SC600N065T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
60mΩ
ID@25°C
43A
Qgd
19.8nC
Coss
140pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
60mΩ
ID@25℃
43A