PRODUCT DETAIL
SC600N065TA-4
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
60mΩ
ID@25°C
48A
Qgd
15.3nC
Coss
162pF
Max Junction Temperature
175℃
Package
TO-247-4
Rds(on)@25℃
60mΩ
ID@25℃
48A