PRODUCT DETAIL
SC600N065TL
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
60mΩ
ID@25°C
37A
Qgd
15.3nC
Coss
139pF
Max Junction Temperature
150℃
Package
TOLL
Rds(on)@25℃
60mΩ
ID@25℃
37A