PRODUCT DETAIL
SC700N170T6-7
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1700V
Rds(on)@25°C
700mΩ
ID@25°C
7A
Qgd
14.4nC
Coss
19.9pF
Max Junction Temperature
175℃
Package
TO-263-7
Rds(on)@25℃
700mΩ
ID@25℃
7A