PRODUCT DETAIL

SC800N120T6-7

碳化硅MOS (SiC MOSFET)

SC800N120T6-7 SC800N120T6-7

SC800N120T6-7

Salltech萨瑞微

量产

SC800N120T6-7

V(BR)DSS: 1200V ID: 32A

主要封装 / 规格TO-263-7

V(BR)DSS1200V

Rds(on)@25°C80mΩ

ID@25°C32A

PackageTO-263-7

查询现货询价

V(BR)DSS 1200V

Rds(on)@25°C 80mΩ

ID@25°C 32A

Qgd 13.5nC

Coss 78pF

Max Junction Temperature 175℃

Package TO-263-7

Rds(on)@25℃ 80mΩ

ID@25℃ 32A