PRODUCT DETAIL
SC800N120T6-7L
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
80mΩ
ID@25°C
36A
Qgd
13.5nC
Coss
148pF
Max Junction Temperature
175℃
Package
TO-263-7L-LF
Rds(on)@25℃
80mΩ
ID@25℃
36A