PRODUCT DETAIL
SC800N120TA
碳化硅MOS (SiC MOSFET)
V(BR)DSS
1200V
Rds(on)@25°C
80mΩ
ID@25°C
47A
Qgd
13.5nC
Coss
78pF
Max Junction Temperature
175℃
Package
TO-247-3
Rds(on)@25℃
80mΩ
ID@25℃
47A