PRODUCT DETAIL
SC990N065TL
碳化硅MOS (SiC MOSFET)
V(BR)DSS
650V
Rds(on)@25°C
99mΩ
ID@25°C
26A
Qgd
11.5nC
Coss
112pF
Max Junction Temperature
150℃
Package
TOLL
Rds(on)@25℃
99mΩ
ID@25℃
26A