PRODUCT DETAIL

SG22N10T6

屏蔽栅沟槽 SGT MOSFET

SG22N10T6 SG22N10T6

SG22N10T6

Salltech萨瑞微

量产

SG22N10T6

Vds: 100V ID: 218A

主要封装 / 规格TO-263

Vds100V

ID218A

Rds Vgs=10V Typ2.9Ω

Rds Vgs=10V Max3.6Ω

查询现货询价

Type SN

Vds 100V

ID 218A

Rds Vgs=10V Typ 2.9Ω

Rds Vgs=10V Max 3.6Ω

Vgs ±20V

VGS(th) Min 2.2V

VGS(th) Max 3.8V

PD 227W

Dynamic Ciss 8320pF

Dynamic Coss 2100pF

Dynamic Crss 310pF

Dynamic Rg 1.5Ω

EAS 524mJ

IAS 45.8A

Marking 27N10T6

Package TO-263

VGS Max 3.8V