PRODUCT DETAIL

SG36N12T6

屏蔽栅沟槽 SGT MOSFET

SG36N12T6 SG36N12T6 SG36N12T6
Salltech萨瑞微
量产

SG36N12T6

Vds: 120V ID: 167A

主要封装 / 规格TO-263
Vds120V
Rds Vgs=10V Typ3.6Ω
Rds Vgs=10V Max4.4Ω
ID167A
Type SN
Vds 120V
Vgs ±20V
Rds Vgs=10V Typ 3.6Ω
Rds Vgs=10V Max 4.4Ω
VGS(th) Min 2V
VGS Max 4V
ID 167A
PD 300W
Dynamic Ciss 5360pF
Dynamic Coss 626pF
Dynamic Crss 13pF
Dynamic Rg 2.7Ω
EAS 540mJ
Marking 36N12
Package TO-263