PRODUCT DETAIL
SG39N12T6
屏蔽栅沟槽 SGT MOSFET
Type
SN
Vds
120V
Vgs
±20V
Rds Vgs=10V Typ
3.9Ω
Rds Vgs=10V Max
4.8Ω
VGS(th) Min
2V
VGS Max
4V
ID
177A
PD
223W
Dynamic Ciss
7360pF
Dynamic Coss
830pF
Dynamic Crss
26pF
Dynamic Rg
1.8Ω
EAS
398mJ
IAS
38.9A
Marking
39N12
Package
TO-263