PRODUCT DETAIL

SJ1K6N65T6

超结SJ MOS (Super Junction MOSFET)

SJ1K6N65T6 SJ1K6N65T6 SJ1K6N65T6
Salltech萨瑞微
量产

SJ1K6N65T6

Vds: 650V ID: 21A

主要封装 / 规格TO-263
Vds650V
Rds Vgs=10V Typ160mΩ
Rds Vgs=10V Max190mΩ
ID21A
Vds 650V
Vgs ±30V
Rds Vgs=10V Typ 160mΩ
Rds Vgs=10V Max 190mΩ
VGS(th) Min 2V
VGS Max 4V
ID 21A
PD 151W
Dynamic Ciss 1610pF
Dynamic Coss 70pF
Dynamic Crss 0.74pF
Dynamic Rg 5.7Ω
EAS 812mJ
IAS 5.7A
Marking 1K6N65
Package TO-263