PRODUCT DETAIL

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屏蔽栅沟槽 SGT MOSFET

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Salltech萨瑞微

量产

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Vds: 4.2V ID: 1850A

主要封装 / 规格110

Vds4.2V

Rds Vgs=10V Typ4Ω

Rds Vgs=10V Max198Ω

ID1850A

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Type 3.6

Vds 4.2V

Vgs 2

Rds Vgs=10V Typ 4Ω

Rds Vgs=10V Max 198Ω

VGS(th) Min 223V

VGS Max 8140V

ID 1850A

PD 190W

Dynamic Ciss 36N11CpF

Dynamic Coss SG34N11T6-CpF

Dynamic Crss TO-263pF

EAS SNmJ

IAS 110A

Marking ±20

Package 110