PRODUCT DETAIL
SP8N65T7
平面MOS (Planar MOSFET)
Type
SN
Vds
650V
ID
8A
Rds Vgs=10V Typ
900mΩ
Rds Vgs=10V Max
1100mΩ
Vgs
±30V
VGS Min V
2V
VGS Max V
4V
PD
36W
Dynamic Ciss pf
1602pf
Dynamic Coss pf
102pf
Dynamic Crss pf
67pf
EAS
432mJ
Marking
8N65
Package
TO-220F
VGS Min
2V
VGS Max
4V
Dynamic Ciss
1602pF
Dynamic Coss
102pF
Dynamic Crss
67pF